Process control of aluminum interconnect deposition involves the analysis of AlCu films on a Si substrate, where the film thickness and Cu concentration have to be determined. Due to its excellent selectivity and precision, wavelength dispersive X-ray fluorescence spectrometry is the ideal technique for AlCu monitoring on wafers in IC manufacturing.
The PANalytical 2830 ZT determines layer composition, thickness, dopant levels and surface uniformity for a wide range of process films and stacks.
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