Available reflections for coplanar and in-plane XRD of GaN and related alloys

This application note provides tables of suitable hkil reflections for the measurement of GaN wafers with the most common semi-polar and non-polar orientations. For completion the 0001 polar orientation is also included.

Gallium nitride and its alloys continue to play an important role worldwide in the optoelectronics industry and in particular in the production of light emitting diodes (LEDs). In the drive for higher efficiencies and novel device design there is increasing interest in the growth of GaN thin films with exotic orientations. High-resolution XRD analyses are employed extensively in the fabrication of GaN layer structures for devices. Typically peak FWHM (full width half maximum) of MQW (multiple quantum well) Bragg peaks are measured for quality control of wafers. 


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