This application note provides tables of suitable hkil reflections for the measurement of GaN wafers with the most common semi-polar and non-polar orientations. For completion the 0001 polar orientation is also included.
Gallium nitride and its alloys continue to play an important role worldwide in the optoelectronics industry and in particular in the production of light emitting diodes (LEDs). In the drive for higher efficiencies and novel device design there is increasing interest in the growth of GaN thin films with exotic orientations. High-resolution XRD analyses are employed extensively in the fabrication of GaN layer structures for devices. Typically peak FWHM (full width half maximum) of MQW (multiple quantum well) Bragg peaks are measured for quality control of wafers.
아직 회원가입하지 않으셨습니까?
Sign up for free today. By registering you will have free access to exclusive content including
- Webinars, presentations and videos
- Application notes, technical notes, articles, white papers and software downloads
And in addition you will receive
- Our regular eNews including the latest news, education, events and offers from Malvern Panalytical