Analysis of Si1-xGex films

Si1-xGex brings about new metrology challenges with respect to process control, like mapping of the Ge homogeneity of deposited films. X-ray fluorescence spectrometry provides a fast and non-destructive solution in this respect, yielding high precision results.

The PANalytical 2830 ZT determines layer composition, thickness, dopant levels and surface uniformity for a wide range of process films and stacks. 


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