Fast X-ray diffraction measurements on semiconductor structures

In this application note, we studied the effects of thermal annealing on the structure of multiple quantum wells. From reciprocal space maps collected on an X’Pert3 MRD system equipped with a nonambient chamber, information about structure, composition and disordering could be derived.

Fast X-ray measurements are especially required for monitoring of physical processes with rapidly changing parameters. They can be used to measure the structural properties of materials used in semiconductors, including attractive wurtzite type gallium nitride. 


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